On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation
نویسندگان
چکیده
We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2 composite NW arrays with controllable geometry are obtained.
منابع مشابه
Nanosphere lithography based technique for fabrication of large area, well ordered metal particle arrays
Nanosphere lithography based technique for fabrication of large area, well ordered metal particle arrays Steven J. Barcelo, Si-Ty Lam, Gary A. Gibson, Xia Sheng, Dick Henze
متن کاملDevelopment of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET
We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Sinw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-base...
متن کاملFabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction
This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperatur...
متن کاملFabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
متن کاملAmbipolar silicon nanowire FETs with stenciled-deposited metal gate
We report on a fully CMOS compatible fabrication method for ambipolar silicon nanowire FinFETs. The low thermal budget processing, compatible with monolithic 3D device integration, makes use of low pressure chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning using stencil lithography, demonstrated for the first time. FinFETs with stenciled A...
متن کامل